JANTXV2N5014
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- Mfr.Part #
- JANTXV2N5014
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 900V 0.2A TO5
- Stock
- 1,038
- In Stock ：
- 1,038
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-39 (TO-205AD)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 900V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector (Ic) (Max) :
- 200mA
- Power - Max :
- 1W
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/727
- Datasheets
- JANTXV2N5014
NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5014S Overview
In this device, the DC current gain is 30 @ 20mA 10V, which is the ratio between the base current and the collector current.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 900V maximal voltage in the device due to collector-emitter breakdown.
JANTXV2N5014S Features
the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-39 (TO-205AD)
JANTXV2N5014S Applications
There are a lot of Microsemi Corporation
JANTXV2N5014S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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