JANTXV2N5012
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- Mfr.Part #
- JANTXV2N5012
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 700V 0.2A TO5
- Stock
- 48,090
- In Stock ：
- 48,090
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 10V
- Published :
- 2007
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 700V
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/727
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power - Max :
- 1W
- Supplier Device Package :
- TO-39 (TO-205AD)
- Datasheets
- JANTXV2N5012
NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5012S Overview
In this device, the DC current gain is 30 @ 25mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 700V.
JANTXV2N5012S Features
the DC current gain for this device is 30 @ 25mA 10V
the supplier device package of TO-39 (TO-205AD)
JANTXV2N5012S Applications
There are a lot of Microsemi Corporation
JANTXV2N5012S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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