JANTXV2N4449
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- Mfr.Part #
- JANTXV2N4449
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 20V TO46
- Stock
- 20,309
- In Stock ：
- 20,309
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/317
- Current - Collector Cutoff (Max) :
- 400nA
- Turn Off Time-Max (toff) :
- 18ns
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 500MHz
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Turn On Time-Max (ton) :
- 12ns
- Collector Emitter Voltage (VCEO) :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Published :
- 2007
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- HTS Code :
- 8541.21.00.95
- Qualification Status :
- Qualified
- Max Power Dissipation :
- 600mW
- JESD-609 Code :
- e0
- Case Connection :
- COLLECTOR
- Power - Max :
- 360mW
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JANTXV2N4449
NPN -65°C~200°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTXV2N4449 Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 10mA, 100mA.500MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 20V.
JANTXV2N4449 Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
a transition frequency of 500MHz
JANTXV2N4449 Applications
There are a lot of Microsemi Corporation
JANTXV2N4449 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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