JANTXV2N4150
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- Mfr.Part #
- JANTXV2N4150
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 70V 10A TO5
- Stock
- 42,809
- In Stock ：
- 42,809
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 70V
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Max Collector Current :
- 10A
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Current - Collector Cutoff (Max) :
- 10μA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 2000ns
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Turn On Time-Max (ton) :
- 550ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Factory Lead Time :
- 20 Weeks
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Transition Frequency :
- 15MHz
- Published :
- 2007
- Number of Terminations :
- 3
- Series :
- Military, MIL-PRF-19500/394
- Max Power Dissipation :
- 1W
- Number of Pins :
- 3
- Pbfree Code :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- 10V
- Datasheets
- JANTXV2N4150
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N4150 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 10A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 15MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
JANTXV2N4150 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz
JANTXV2N4150 Applications
There are a lot of Microsemi Corporation
JANTXV2N4150 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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