JANTXV2N4029
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- Mfr.Part #
- JANTXV2N4029
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO18
- Stock
- 45,904
- In Stock ：
- 45,904
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Turn On Time-Max (ton) :
- 40ns
- Max Collector Current :
- 1A
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2002
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Bulk
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 23 Weeks
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power Dissipation :
- 500mW
- Series :
- Military, MIL-PRF-19500/512
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Wire
- Datasheets
- JANTXV2N4029
PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N4029 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 1A volts at its maximum.
JANTXV2N4029 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
JANTXV2N4029 Applications
There are a lot of Microsemi Corporation
JANTXV2N4029 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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