JANTXV2N3999P
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- Mfr.Part #
- JANTXV2N3999P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 44,517
- In Stock ：
- 44,517
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Stud Mount
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Brand :
- Microchip / Microsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A, 2V
- Subcategory :
- Transistors
- RoHS :
- N
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 10μA
- Product Category :
- Bipolar Transistors - BJT
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Product Status :
- Active
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector (Ic) (Max) :
- 10 A
- Power - Max :
- 2 W
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Series :
- Military, MIL-PRF-19500/374
- Supplier Device Package :
- TO-59
- Datasheets
- JANTXV2N3999P
NPN -65°C ~ 200°C (TJ) 10μA TO-210AA, TO-59-4, Stud Stud Mount
JANTXV2N3999P Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 1A, 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 500mA, 5A.This product comes in a TO-59 device package from the supplier.Device displays Collector Emitter Breakdown (80 V maximal voltage).
JANTXV2N3999P Features
the DC current gain for this device is 80 @ 1A, 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the supplier device package of TO-59
JANTXV2N3999P Applications
There are a lot of Microchip Technology
JANTXV2N3999P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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