JANTXV2N3868S
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- Mfr.Part #
- JANTXV2N3868S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.003A TO39
- Stock
- 9,648
- In Stock ：
- 9,648
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Turn Off Time-Max (toff) :
- 600ns
- Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Number of Pins :
- 3
- Published :
- 2007
- Mount :
- Through Hole
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Series :
- Military, MIL-PRF-19500/350
- Pin Count :
- 2
- Terminal Form :
- Wire
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 4V
- Polarity/Channel Type :
- PNP
- Datasheets
- JANTXV2N3868S
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3868S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1.5A 2V.When VCE saturation is 1.5V @ 250mA, 2.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.A maximum collector current of 3A volts can be achieved.
JANTXV2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JANTXV2N3868S Applications
There are a lot of Microsemi Corporation
JANTXV2N3868S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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