JANTXV2N3767
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- Mfr.Part #
- JANTXV2N3767
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO66
- Stock
- 37,161
- In Stock ：
- 37,161
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 10MHz
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 5V
- Operating Temperature :
- -65°C~200°C TJ
- JESD-30 Code :
- O-MBFM-P2
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 500μA
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-213AA, TO-66-2
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Qualified
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Terminal Form :
- PIN/PEG
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2002
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 100mA, 1A
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Configuration :
- Single
- Power Dissipation :
- 25W
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/518
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e0
- Datasheets
- JANTXV2N3767
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N3767 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 100mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
JANTXV2N3767 Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 10MHz
JANTXV2N3767 Applications
There are a lot of Microsemi Corporation
JANTXV2N3767 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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