JANTXV2N3767
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- Mfr.Part #
- JANTXV2N3767
- Manufacturer
- MACOM Technology Solutions
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO66
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- MACOM Technology Solutions
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-MBFM-P2
- Qualification Status :
- Qualified
- Number of Terminations :
- 2
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Package / Case :
- TO-213AA, TO-66-2
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Terminal Form :
- PIN/PEG
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 100mA, 1A
- Number of Elements :
- 1
- Power Dissipation :
- 25W
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 20 Weeks
- Transition Frequency :
- 10MHz
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 25W
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Max Collector Current :
- 4A
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 5V
- Published :
- 2002
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/518
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500μA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Datasheets
- JANTXV2N3767
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N3767 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 100mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
JANTXV2N3767 Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 10MHz
JANTXV2N3767 Applications
There are a lot of Microsemi Corporation
JANTXV2N3767 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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