JANTXV2N3735

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

10μA ICBO

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

75V

Vce Saturation (Max) @ Ib, Ic :

900mV @ 100mA, 1A

Qualification Status :

Qualified

Number of Terminations :

3

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Turn On Time-Max (ton) :

48ns

Mounting Type :

Through Hole

Packaging :

Bulk

HTS Code :

8541.29.00.95

Terminal Form :

Wire

Max Power Dissipation :

1W

Power - Max :

1W

Collector Emitter Breakdown Voltage :

40V

Polarity/Channel Type :

NPN

Series :

Military, MIL-PRF-19500/395

JESD-609 Code :

e0

Terminal Position :

BOTTOM

Operating Temperature :

-65°C~200°C TJ

Published :

2007

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

900mV

Turn Off Time-Max (toff) :

60ns

ECCN Code :

EAR99

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Package / Case :

TO-205AD, TO-39-3 Metal Can

RoHS Status :

Non-RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 1.5V

Mount :

Through Hole

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Max Collector Current :

1.5A