JANTXV2N3637UB
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- Mfr.Part #
- JANTXV2N3637UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A 3SMD
- Stock
- 47,662
- In Stock ：
- 47,662
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 650ns
- Power Dissipation :
- 1W
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Surface Mount
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- 3-SMD, No Lead
- Factory Lead Time :
- 23 Weeks
- Collector Base Voltage (VCBO) :
- 175V
- Power - Max :
- 1.5W
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Pbfree Code :
- No
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/357
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 1A
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 200ns
- HTS Code :
- 8541.29.00.95
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 175V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- JANTXV2N3637UB
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JANTXV2N3637UB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.
JANTXV2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JANTXV2N3637UB Applications
There are a lot of Microsemi Corporation
JANTXV2N3637UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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