JANTXV2N3637P
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- Mfr.Part #
- JANTXV2N3637P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 32,697
- In Stock ：
- 32,697
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/357
- Manufacturer :
- Microchip
- Power - Max :
- 1 W
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Product Status :
- Active
- Product Type :
- BJTs - Bipolar Transistors
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-39 (TO-205AD)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10μA
- Subcategory :
- Transistors
- Current - Collector (Ic) (Max) :
- 1 A
- Brand :
- Microchip / Microsemi
- Datasheets
- JANTXV2N3637P
PNP -65°C ~ 200°C (TJ) 10μA TO-205AD, TO-39-3 Metal Can Through Hole
JANTXV2N3637P Overview
This device has a DC current gain of 100 @ 50mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-39 (TO-205AD).Detection of Collector Emitter Breakdown at 175 V maximal voltage is present.
JANTXV2N3637P Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39 (TO-205AD)
JANTXV2N3637P Applications
There are a lot of Microchip Technology
JANTXV2N3637P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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