JANTXV2N3635L
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- Mfr.Part #
- JANTXV2N3635L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO5
- Stock
- 26,488
- In Stock ：
- 26,488
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 3
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 140V
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- JESD-609 Code :
- e0
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Turn Off Time-Max (toff) :
- 650ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Turn On Time-Max (ton) :
- 200ns
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Base Voltage (VCBO) :
- 140V
- Max Collector Current :
- 1A
- Series :
- Military, MIL-PRF-19500/357
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JANTXV2N3635L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3635L Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.
JANTXV2N3635L Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JANTXV2N3635L Applications
There are a lot of Microsemi Corporation
JANTXV2N3635L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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