JANTXV2N3585
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- Mfr.Part #
- JANTXV2N3585
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 300V 2A TO66
- Stock
- 7,420
- In Stock ：
- 7,420
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Configuration :
- Single
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 2.5W
- Package / Case :
- TO-213AA, TO-66-2
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/384
- Mounting Type :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Current - Collector Cutoff (Max) :
- 5mA
- Max Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 500V
- Pin Count :
- 2
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 10V
- Transistor Application :
- SWITCHING
- Terminal Form :
- PIN/PEG
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 125mA, 1A
- Collector Emitter Voltage (VCEO) :
- 300V
- Power Dissipation :
- 2.5W
- Qualification Status :
- Qualified
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Datasheets
- JANTXV2N3585
NPN -65°C~200°C TJ 5mA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N3585 Overview
This device has a DC current gain of 25 @ 1A 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 2A volts is possible.
JANTXV2N3585 Features
the DC current gain for this device is 25 @ 1A 10V
the vce saturation(Max) is 750mV @ 125mA, 1A
the emitter base voltage is kept at 6V
JANTXV2N3585 Applications
There are a lot of Microsemi Corporation
JANTXV2N3585 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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