JANTXV2N3440
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- Mfr.Part #
- JANTXV2N3440
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO39
- Stock
- 33,255
- In Stock ：
- 33,255
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 2µA
- Collector Base Voltage (VCBO) :
- 300V
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Pbfree Code :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 1A
- Lead Free :
- Contains Lead
- Terminal Form :
- Wire
- Pin Count :
- 2
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 250V
- Max Power Dissipation :
- 800mW
- Power Dissipation :
- 800mW
- Transition Frequency :
- 15MHz
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Series :
- Military, MIL-PRF-19500/368
- Datasheets
- JANTXV2N3440
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3440 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 20mA 10V.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 15MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N3440 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTXV2N3440 Applications
There are a lot of Microsemi Corporation
JANTXV2N3440 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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