JANTXV2N3439L
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- Mfr.Part #
- JANTXV2N3439L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO5
- Stock
- 36,770
- In Stock ：
- 36,770
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Power - Max :
- 800mW
- Turn Off Time-Max (toff) :
- 10000ns
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Pbfree Code :
- No
- Factory Lead Time :
- 20 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Turn On Time-Max (ton) :
- 1000ns
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/368
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 2µA
- Collector Base Voltage (VCBO) :
- 450V
- Pin Count :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 800mW
- HTS Code :
- 8541.21.00.95
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Reference Standard :
- MIL-19500
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Qualification Status :
- Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Number of Pins :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JANTXV2N3439L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3439L Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 20mA 10V.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 1A volts can be achieved.
JANTXV2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
JANTXV2N3439L Applications
There are a lot of Microsemi Corporation
JANTXV2N3439L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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