JANTXV2N3421S
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- Mfr.Part #
- JANTXV2N3421S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO39
- Stock
- 20,266
- In Stock ：
- 20,266
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 5μA
- Max Collector Current :
- 3A
- Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 125V
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/393
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Qualified
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Number of Elements :
- 1
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 8V
- Datasheets
- JANTXV2N3421S
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3421S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.Collector current can be as low as 3A volts at its maximum.
JANTXV2N3421S Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTXV2N3421S Applications
There are a lot of Microsemi Corporation
JANTXV2N3421S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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