JANTXV2N3250AUB/TR
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- Mfr.Part #
- JANTXV2N3250AUB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 41,875
- In Stock ：
- 41,875
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Power - Max :
- 360 mW
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 20nA
- Supplier Device Package :
- UB
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Series :
- Military, MIL-PRF-19500/323
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA, 1V
- Current - Collector (Ic) (Max) :
- 200 mA
- Package :
- Tape and Reel (TR)
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- JANTXV2N3250AUB/TR
PNP -65°C ~ 200°C (TJ) 20nA 3-SMD, No Lead Surface Mount
JANTXV2N3250AUB/TR Overview
This device has a DC current gain of 50 @ 10mA, 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60 V maximal voltage is present.
JANTXV2N3250AUB/TR Features
the DC current gain for this device is 50 @ 10mA, 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of UB
JANTXV2N3250AUB/TR Applications
There are a lot of Microchip
JANTXV2N3250AUB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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