JANTXV2N3019P
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- Mfr.Part #
- JANTXV2N3019P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 44,572
- In Stock ：
- 44,572
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Product Status :
- Active
- Power - Max :
- 800 mW
- RoHS :
- N
- Mounting Type :
- Through Hole
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Package :
- Bulk
- Supplier Device Package :
- TO-5AA
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10nA
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector (Ic) (Max) :
- 1 A
- Series :
- Military, MIL-PRF-19500/391
- Brand :
- Microchip / Microsemi
- Datasheets
- JANTXV2N3019P
NPN -65°C ~ 200°C (TJ) 10nA TO-205AA, TO-5-3 Metal Can Through Hole
JANTXV2N3019P Overview
DC current gain in this device equals 100 @ 150mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Product comes in TO-5AA supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
JANTXV2N3019P Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-5AA
JANTXV2N3019P Applications
There are a lot of Microchip Technology
JANTXV2N3019P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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