JANTXV2N3019
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- Mfr.Part #
- JANTXV2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO5
- Stock
- 41,225
- In Stock ：
- 41,225
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 800mW
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Form :
- Wire
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- Series :
- Military, MIL-PRF-19500/391
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Qualification Status :
- Qualified
- Pin Count :
- 2
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 140V
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation :
- 800mW
- Number of Elements :
- 1
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Datasheets
- JANTXV2N3019
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3019 Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.
JANTXV2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JANTXV2N3019 Applications
There are a lot of Microsemi Corporation
JANTXV2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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