JANTXV2N2907A

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Mfr.Part #
JANTXV2N2907A
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS PNP 60V 0.6A TO18
Stock
3,582
In Stock :
3,582

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Max Power Dissipation :
500mW
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Mount :
Through Hole
Number of Pins :
3
Voltage - Collector Emitter Breakdown (Max) :
60V
Max Operating Temperature :
200°C
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
600mA
Mounting Type :
Through Hole
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Polarity :
PNP
Published :
2002
Series :
Military, MIL-PRF-19500/291
Factory Lead Time :
8 Weeks
Lead Free :
Contains Lead
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Current - Collector Cutoff (Max) :
50nA
Power Dissipation :
500mW
Max Collector Current :
600mA
Operating Temperature :
-65°C~200°C TJ
Collector Emitter Breakdown Voltage :
60V
Package / Case :
TO-206AA, TO-18-3 Metal Can
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
60V
Power - Max :
500mW
Min Operating Temperature :
-65°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Collector Base Voltage (VCBO) :
60V
Supplier Device Package :
TO-18
Datasheets
JANTXV2N2907A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2907A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-206AA, TO-18-3 Metal Can, JANTXV2N2907A pinout, JANTXV2N2907A datasheet PDF, JANTXV2N2907A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2907A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANTXV2N2907A


PNP -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

JANTXV2N2907A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.This product comes in a TO-18 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

JANTXV2N2907A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18


JANTXV2N2907A Applications


There are a lot of Microsemi Corporation
JANTXV2N2907A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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