JANTXV2N2905
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- Mfr.Part #
- JANTXV2N2905
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 1UA TO39
- Stock
- 44,084
- In Stock ：
- 44,084
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Power - Max :
- 800mW
- Operating Temperature :
- -65°C~200°C TJ
- Turn On Time-Max (ton) :
- 45ns
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 800mW
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Pin Count :
- 2
- Factory Lead Time :
- 23 Weeks
- Series :
- Military, MIL-PRF-19500/290
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 1μA
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 600mW
- Mount :
- Through Hole
- Transition Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Collector Current :
- 600mA
- Qualification Status :
- Qualified
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- JANTXV2N2905
PNP -65°C~200°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N2905A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.
JANTXV2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N2905A Applications
There are a lot of Microsemi Corporation
JANTXV2N2905A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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