JANTXV2N2432
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- Mfr.Part #
- JANTXV2N2432
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 10UA TO18
- Stock
- 33,857
- In Stock ：
- 33,857
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- Chopper
- Current - Collector Cutoff (Max) :
- 10nA
- Pin Count :
- 3
- Factory Lead Time :
- 20 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Published :
- 2007
- Transition Frequency :
- 20MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/313
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1mA 5V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Emitter Base Voltage (VEBO) :
- 18V
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 100mA
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~175°C TJ
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 0.15mV @ 500μA, 10V
- Packaging :
- Bulk
- Datasheets
- JANTXV2N2432
NPN -65°C~175°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N2432A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 0.15mV @ 500μA, 10V.If the emitter base voltage is kept at 18V, a high level of efficiency can be achieved.A transition frequency of 20MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
JANTXV2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 0.15mV @ 500μA, 10V
the emitter base voltage is kept at 18V
a transition frequency of 20MHz
JANTXV2N2432A Applications
There are a lot of Microsemi Corporation
JANTXV2N2432A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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