JANTXV2N2369A
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- Mfr.Part #
- JANTXV2N2369A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V TO206AA
- Stock
- 22,471
- In Stock ：
- 22,471
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 400nA
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 4.5V
- Transition Frequency :
- 500MHz
- Max Power Dissipation :
- 600mW
- Series :
- Military, MIL-PRF-19500/317
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Pin Count :
- 3
- Factory Lead Time :
- 23 Weeks
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Power Dissipation :
- 600mW
- Lead Free :
- Contains Lead
- Power - Max :
- 360mW
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- JANTXV2N2369A
NPN -65°C~200°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N2369A Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 10mA, 100mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.500MHz is present in the transition frequency.
JANTXV2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JANTXV2N2369A Applications
There are a lot of Microsemi Corporation
JANTXV2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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