JANTX2N708
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- Mfr.Part #
- JANTX2N708
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V TO18
- Stock
- 46,409
- In Stock ：
- 46,409
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 15V
- Power Dissipation :
- 360mW
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 25nA ICBO
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Configuration :
- Single
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2002
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Number of Elements :
- 1
- Factory Lead Time :
- 23 Weeks
- Case Connection :
- COLLECTOR
- Turn On Time-Max (ton) :
- 40ns
- Collector Base Voltage (VCBO) :
- 40V
- Qualification Status :
- Qualified
- Terminal Form :
- Wire
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 75ns
- Max Power Dissipation :
- 360mW
- Series :
- Military, MIL-PRF-19500/312
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Datasheets
- JANTX2N708
NPN -65°C~200°C TJ 25nA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTX2N708 Overview
DC current gain in this device equals 40 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 1mA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.
JANTX2N708 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
JANTX2N708 Applications
There are a lot of Microsemi Corporation
JANTX2N708 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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