JANTX2N6299
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- Mfr.Part #
- JANTX2N6299
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A
- Stock
- 5,980
- In Stock ：
- 5,980
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2V
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- JESD-30 Code :
- O-MBFM-P2
- Terminal Form :
- PIN/PEG
- Max Collector Current :
- 500μA
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 2
- Power - Max :
- 64W
- Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 8A
- ECCN Code :
- EAR99
- Transition Frequency :
- 4MHz
- Transistor Type :
- PNP - Darlington
- JESD-609 Code :
- e0
- Package / Case :
- TO-213AA, TO-66-2
- Published :
- 2002
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Mount :
- Through Hole
- Series :
- Military, MIL-PRF-19500/540
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Contact Plating :
- Lead, Tin
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 64W
- Operating Temperature :
- -65°C~175°C TJ
- Pbfree Code :
- No
- Datasheets
- JANTX2N6299
PNP - Darlington -65°C~175°C TJ 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N6299 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 500μA volts.
JANTX2N6299 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTX2N6299 Applications
There are a lot of Microsemi Corporation
JANTX2N6299 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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