JANTX2N6058
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- Mfr.Part #
- JANTX2N6058
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 12A TO3
- Stock
- 663
- In Stock ：
- 663
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-204AA, TO-3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 3V
- Pin Count :
- 2
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 12A
- Factory Lead Time :
- 20 Weeks
- Element Configuration :
- Single
- Mount :
- Through Hole
- Pbfree Code :
- No
- Number of Terminations :
- 2
- Max Power Dissipation :
- 150W
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Series :
- Military, MIL-PRF-19500/502
- Terminal Form :
- PIN/PEG
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- O-MBFM-P2
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Lead, Tin
- Qualification Status :
- Qualified
- Lead Free :
- Contains Lead
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 150W
- Case Connection :
- COLLECTOR
- Datasheets
- JANTX2N6058
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTX2N6058 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 120mA, 12A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 12A volts.
JANTX2N6058 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N6058 Applications
There are a lot of Microsemi Corporation
JANTX2N6058 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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