JANTX2N5660
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- Mfr.Part #
- JANTX2N5660
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 200V 2A TO66
- Stock
- 38,876
- In Stock ：
- 38,876
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-213AA, TO-66-2
- Transition Frequency :
- 20MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 400mA, 2A
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mount :
- Through Hole
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 200V
- Power Dissipation :
- 2W
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Pin Count :
- 3
- Terminal Form :
- PIN/PEG
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 5V
- Factory Lead Time :
- 20 Weeks
- JESD-30 Code :
- O-MBFM-P2
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 250V
- Series :
- Military, MIL-PRF-19500/454
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 200nA
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Number of Terminations :
- 2
- Published :
- 2007
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 2W
- Datasheets
- JANTX2N5660
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Surface Mount
JANTX2N5660 Overview
DC current gain in this device equals 40 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 400mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 20MHz.In extreme cases, the collector current can be as low as 2A volts.
JANTX2N5660 Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 800mV @ 400mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
JANTX2N5660 Applications
There are a lot of Microsemi Corporation
JANTX2N5660 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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