JANTX2N5581
- Mfr.Part #
- JANTX2N5581
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46
- Stock
- 28,372
- In Stock :
- 28,372
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Reference Standard :
- MIL-19500/423E
- Terminal Form :
- Wire
- JESD-30 Code :
- O-MBCY-W3
- Contact Plating :
- Lead, Tin
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Pin Count :
- 3
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/423
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 800mA
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- Max Collector Current :
- 800mA
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Turn On Time-Max (ton) :
- 35ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 300ns
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Max Power Dissipation :
- 500mW
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 75V
- HTS Code :
- 8541.21.00.95
- Datasheets
- JANTX2N5581
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTX2N5581 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JANTX2N5581 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JANTX2N5581 Applications
There are a lot of Microsemi Corporation
JANTX2N5581 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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