JANTX2N5416S
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- Mfr.Part #
- JANTX2N5416S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A TO39
- Stock
- 28,079
- In Stock ：
- 28,079
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MBCY-W4
- Qualification Status :
- Qualified
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Max Power Dissipation :
- 750mW
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 350V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 1996
- Number of Pins :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-5
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Operating Temperature :
- -65°C~200°C TJ
- Configuration :
- Single
- Power Dissipation :
- 750mW
- Max Collector Current :
- 1A
- Pbfree Code :
- No
- Terminal Form :
- Wire
- Series :
- Military, MIL-PRF-19500/485
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Through Hole
- Number of Terminations :
- 4
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JANTX2N5416S
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N5416S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5416S Applications
There are a lot of Microsemi Corporation
JANTX2N5416S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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