JANTX2N5012S

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Mfr.Part #
JANTX2N5012S
Manufacturer
Microsemi
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS NPN 700V 0.2A TO39
Stock
48,360
In Stock :
48,360

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Packaging :
Bulk
Current - Collector Cutoff (Max) :
10nA ICBO
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Published :
2007
Operating Temperature :
-65°C~200°C TJ
Polarity :
NPN
RoHS Status :
Non-RoHS Compliant
Number of Pins :
3
Collector Base Voltage (VCBO) :
700V
Series :
Military, MIL-PRF-19500/727
Max Power Dissipation :
1W
Current - Collector (Ic) (Max) :
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 25mA 10V
Supplier Device Package :
TO-39 (TO-205AD)
Lifecycle Status :
OBSOLETE (Last Updated: 3 weeks ago)
Number of Elements :
1
Max Operating Temperature :
200°C
Power Dissipation :
1W
Package / Case :
TO-205AD, TO-39-3 Metal Can
Min Operating Temperature :
-65°C
Voltage - Collector Emitter Breakdown (Max) :
700V
Max Collector Current :
200mA
Moisture Sensitivity Level (MSL) :
Not Applicable
Power - Max :
1W
Transistor Type :
NPN
Mount :
Through Hole
Datasheets
JANTX2N5012S
Introducing Transistors - Bipolar (BJT) - Single Microsemi JANTX2N5012S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Package / Case:TO-205AD, TO-39-3 Metal Can, JANTX2N5012S pinout, JANTX2N5012S datasheet PDF, JANTX2N5012S amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JANTX2N5012S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microsemi JANTX2N5012S


NPN -65°C~200°C TJ 10nA ICBO 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JANTX2N5012S Overview


This device has a DC current gain of 30 @ 25mA 10V, which is the ratio between the collector current and the base current.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-39 (TO-205AD).Detection of Collector Emitter Breakdown at 700V maximal voltage is present.The maximum collector current is 200mA volts.

JANTX2N5012S Features


the DC current gain for this device is 30 @ 25mA 10V
the emitter base voltage is kept at 5V
the supplier device package of TO-39 (TO-205AD)


JANTX2N5012S Applications


There are a lot of Microsemi Corporation
JANTX2N5012S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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