JANTX2N4150P
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- Mfr.Part #
- JANTX2N4150P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 31,609
- In Stock ：
- 31,609
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Product Type :
- BJTs - Bipolar Transistors
- Frequency - Transition :
- -
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Current - Collector (Ic) (Max) :
- 10 A
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- RoHS :
- N
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 5V
- Subcategory :
- Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 70 V
- Series :
- Military, MIL-PRF-19500/394
- Supplier Device Package :
- TO-5AA
- Power - Max :
- 1 W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Brand :
- Microchip / Microsemi
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- NPN
- Product Status :
- Active
- Datasheets
- JANTX2N4150P
NPN -65°C ~ 200°C (TJ) 10μA TO-205AA, TO-5-3 Metal Can Through Hole
JANTX2N4150P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 1A, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 10A.The product comes in the supplier device package of TO-5AA.A 70 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANTX2N4150P Features
the DC current gain for this device is 50 @ 1A, 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the supplier device package of TO-5AA
JANTX2N4150P Applications
There are a lot of Microchip Technology
JANTX2N4150P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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