JANTX2N3868S
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- Mfr.Part #
- JANTX2N3868S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.003A TO39
- Stock
- 32,597
- In Stock ：
- 32,597
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Turn Off Time-Max (toff) :
- 600ns
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Military, MIL-PRF-19500/350
- Mount :
- Through Hole
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Terminal Form :
- Wire
- Pbfree Code :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 1W
- Pin Count :
- 2
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 4V
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Terminations :
- 3
- Qualification Status :
- Qualified
- Datasheets
- JANTX2N3868S
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3868S Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JANTX2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JANTX2N3868S Applications
There are a lot of Microsemi Corporation
JANTX2N3868S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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