JANTX2N3637L
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- Mfr.Part #
- JANTX2N3637L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO5
- Stock
- 38,660
- In Stock ：
- 38,660
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Power - Max :
- 1W
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Base Voltage (VCBO) :
- 175V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 23 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Turn Off Time-Max (toff) :
- 650ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 175V
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/357
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- HTS Code :
- 8541.29.00.95
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 200ns
- Published :
- 2007
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JANTX2N3637L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3637L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.
JANTX2N3637L Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JANTX2N3637L Applications
There are a lot of Microsemi Corporation
JANTX2N3637L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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