JANTX2N3637
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- Mfr.Part #
- JANTX2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO5
- Stock
- 32,391
- In Stock ：
- 32,391
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 175V
- Turn On Time-Max (ton) :
- 200ns
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Mount :
- Through Hole
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Power Dissipation :
- 1W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2002
- Pin Count :
- 2
- Packaging :
- Bulk
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 650ns
- Series :
- Military, MIL-PRF-19500/357
- Terminal Form :
- Wire
- Max Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Contact Plating :
- Lead, Tin
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 175V
- Datasheets
- JANTX2N3637
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3637 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 1A volts can be achieved.
JANTX2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N3637 Applications
There are a lot of Microsemi Corporation
JANTX2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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