JANTX2N3501UB
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- Mfr.Part #
- JANTX2N3501UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A UB
- Stock
- 45,373
- In Stock ：
- 45,373
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Turn On Time-Max (ton) :
- 115ns
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- R-CDSO-N3
- Series :
- Military, MIL-PRF-19500/366
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Pins :
- 4
- Factory Lead Time :
- 23 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Configuration :
- Single
- Mount :
- Surface Mount
- Packaging :
- Bulk
- Power - Max :
- 500mW
- Package / Case :
- 3-SMD, No Lead
- Number of Terminations :
- 3
- Published :
- 2007
- Max Collector Current :
- 300mA
- Operating Temperature :
- -65°C~200°C TJ
- Reference Standard :
- MIL-19500/366
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 1150ns
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Datasheets
- JANTX2N3501UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JANTX2N3501UB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 300mA volts.
JANTX2N3501UB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
JANTX2N3501UB Applications
There are a lot of Microsemi Corporation
JANTX2N3501UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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