JANTX2N3499UB/TR
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- Mfr.Part #
- JANTX2N3499UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 31,891
- In Stock ：
- 31,891
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- RoHS :
- N
- Package :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Product Status :
- Active
- Power - Max :
- 1 W
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector (Ic) (Max) :
- 500 mA
- Transistor Type :
- NPN
- Manufacturer :
- Microchip
- Supplier Device Package :
- UB
- Frequency - Transition :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Brand :
- Microchip / Microsemi
- Mounting Type :
- Surface Mount
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Series :
- Military, MIL-PRF-19500/366
- Package / Case :
- 3-SMD, No Lead
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Datasheets
- JANTX2N3499UB/TR
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) 3-SMD, No Lead Surface Mount
JANTX2N3499UB/TR Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 100 V.
JANTX2N3499UB/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of UB
JANTX2N3499UB/TR Applications
There are a lot of Microchip Technology
JANTX2N3499UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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