JANTX2N3440
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- Mfr.Part #
- JANTX2N3440
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO39
- Stock
- 36,689
- In Stock ：
- 36,689
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 300V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Pbfree Code :
- No
- Power Dissipation :
- 800mW
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 2µA
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/368
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 250V
- Collector Emitter Voltage (VCEO) :
- 250V
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- Transition Frequency :
- 15MHz
- Factory Lead Time :
- 20 Weeks
- Max Power Dissipation :
- 800mW
- Case Connection :
- COLLECTOR
- Pin Count :
- 2
- Packaging :
- Bulk
- Datasheets
- JANTX2N3440
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3440 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 20mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 15MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
JANTX2N3440 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTX2N3440 Applications
There are a lot of Microsemi Corporation
JANTX2N3440 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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