JANTX2N3421S
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- Mfr.Part #
- JANTX2N3421S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO39
- Stock
- 12,613
- In Stock ：
- 12,613
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Power Dissipation :
- 1W
- Factory Lead Time :
- 20 Weeks
- Mount :
- Through Hole
- Number of Pins :
- 3
- Packaging :
- Bulk
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 1W
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 5μA
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 2
- Collector Base Voltage (VCBO) :
- 125V
- Emitter Base Voltage (VEBO) :
- 8V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- ECCN Code :
- EAR99
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/393
- Transistor Type :
- NPN
- Published :
- 2007
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Datasheets
- JANTX2N3421S
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3421S Overview
In this device, the DC current gain is 40 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 8V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N3421S Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTX2N3421S Applications
There are a lot of Microsemi Corporation
JANTX2N3421S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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