JANTX2N3421
- Mfr.Part #
- JANTX2N3421
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO5
- Stock
- 24,956
- In Stock :
- 24,956
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current - Collector Cutoff (Max) :
- 5μA
- RoHS Status :
- Non-RoHS Compliant
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Terminal Form :
- Wire
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 20 Weeks
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Series :
- Military, MIL-PRF-19500/393
- Qualification Status :
- Qualified
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 125V
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 8V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lead Free :
- Contains Lead
- Published :
- 2002
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Application :
- SWITCHING
- Pin Count :
- 2
- Number of Terminations :
- 3
- Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- JANTX2N3421
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3421 Overview
DC current gain in this device equals 40 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 8V to gain high efficiency.In extreme cases, the collector current can be as low as 3A volts.
JANTX2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTX2N3421 Applications
There are a lot of Microsemi Corporation
JANTX2N3421 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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