JANTX2N3250A
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- Mfr.Part #
- JANTX2N3250A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.2A TO39
- Stock
- 6,572
- In Stock ：
- 6,572
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 200mA
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/323
- Terminal Form :
- Wire
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation :
- 360mW
- Max Power Dissipation :
- 360mW
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 1V
- Number of Pins :
- 3
- Mount :
- Through Hole
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 20 Weeks
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Transition Frequency :
- 250MHz
- Operating Temperature :
- -65°C~200°C TJ
- Turn Off Time-Max (toff) :
- 250ns
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 70ns
- Datasheets
- JANTX2N3250A
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N3250A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 200mA volts.
JANTX2N3250A Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
JANTX2N3250A Applications
There are a lot of Microsemi Corporation
JANTX2N3250A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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