JANTX2N3057A
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- Mfr.Part #
- JANTX2N3057A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO46
- Stock
- 40,423
- In Stock ：
- 40,423
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Power Dissipation :
- 500mW
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10nA
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 1A
- Factory Lead Time :
- 23 Weeks
- Packaging :
- Bulk
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/391
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 140V
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Contact Plating :
- Lead, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 500mW
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Datasheets
- JANTX2N3057A
NPN -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTX2N3057A Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTX2N3057A Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANTX2N3057A Applications
There are a lot of Microsemi Corporation
JANTX2N3057A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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