JANTX2N2369AUB
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- Mfr.Part #
- JANTX2N2369AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 20V UB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Surface Mount
- Series :
- Military, MIL-PRF-19500/317
- Terminal Position :
- Dual
- Max Power Dissipation :
- 400mW
- Power Dissipation :
- 360mW
- Packaging :
- Bulk
- Factory Lead Time :
- 23 Weeks
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 40V
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 400nA
- JESD-609 Code :
- e0
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Package / Case :
- 3-SMD, No Lead
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 4.5V
- Mount :
- Surface Mount
- Power - Max :
- 400mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Emitter Breakdown Voltage :
- 15V
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Datasheets
- JANTX2N2369AUB
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JANTX2N2369AUB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.The emitter base voltage can be kept at 4.5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 400nA volts at Single BJT transistors maximum.
JANTX2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
JANTX2N2369AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2369AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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