JANTX2N2369A
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- Mfr.Part #
- JANTX2N2369A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V TO18
- Stock
- 160
- In Stock ：
- 160
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 4.5V
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Max Collector Current :
- 400nA
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 15V
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 360mW
- Pin Count :
- 3
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Mount :
- Through Hole
- Max Power Dissipation :
- 360mW
- Qualification Status :
- Qualified
- Series :
- Military, MIL-PRF-19500/317
- Number of Pins :
- 3
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Terminal Form :
- Wire
- Factory Lead Time :
- 23 Weeks
- Transition Frequency :
- 500MHz
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Datasheets
- JANTX2N2369A
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTX2N2369A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 100mA 1V.When VCE saturation is 450mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.In the part, the transition frequency is 500MHz.A maximum collector current of 400nA volts can be achieved.
JANTX2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JANTX2N2369A Applications
There are a lot of Microsemi Corporation
JANTX2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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