JANTX2N2222AUA
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- Mfr.Part #
- JANTX2N2222AUA
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A 4SMD
- Stock
- 6,822
- In Stock ：
- 6,822
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Max Collector Current :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Package / Case :
- 4-SMD
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 4
- Transistor Type :
- NPN
- Published :
- 1996
- Supplier Device Package :
- 4-SMD
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Bulk
- Max Power Dissipation :
- 500mW
- Max Operating Temperature :
- 200°C
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 23 Weeks
- Current - Collector (Ic) (Max) :
- 800mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power Dissipation :
- 500mW
- Radiation Hardening :
- No
- Min Operating Temperature :
- -65°C
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Series :
- Military, MIL-PRF-19500/255
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount, Through Hole
- Power - Max :
- 500mW
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector Cutoff (Max) :
- 50nA
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JANTX2N2222AUA
NPN -65°C~200°C TJ 50nA 1 Elements 4-SMD Bulk Surface Mount
JANTX2N2222AUA Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor comes in a supplier device package of 4-SMD.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.The maximum collector current is 800mA volts.
JANTX2N2222AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 4-SMD
JANTX2N2222AUA Applications
There are a lot of Microsemi Corporation
JANTX2N2222AUA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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