JANTX2N2219
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- Mfr.Part #
- JANTX2N2219
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 6,997
- In Stock ：
- 6,997
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 800mW
- Series :
- Military, MIL-PRF-19500/251
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Published :
- 2007
- Mount :
- Through Hole
- Max Collector Current :
- 800mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Supplier Device Package :
- TO-39
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Power - Max :
- 800mW
- Operating Temperature :
- -55°C~200°C TJ
- Min Operating Temperature :
- -55°C
- Current - Collector (Ic) (Max) :
- 800mA
- Max Power Dissipation :
- 800mW
- Polarity :
- NPN
- Max Operating Temperature :
- 200°C
- Collector Emitter Breakdown Voltage :
- 50V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 75V
- Lead Free :
- Contains Lead
- Contact Plating :
- Lead, Tin
- Transistor Type :
- NPN
- Datasheets
- JANTX2N2219
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39.There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
JANTX2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39
JANTX2N2219A Applications
There are a lot of Microsemi Corporation
JANTX2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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