JANTX2N2218
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- Mfr.Part #
- JANTX2N2218
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 38,518
- In Stock ：
- 38,518
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 75V
- JEDEC-95 Code :
- TO-5
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 250MHz
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~200°C TJ
- Power Dissipation :
- 800mW
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Qualification Status :
- Qualified
- Max Power Dissipation :
- 800mW
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 10nA
- Pin Count :
- 2
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Transistor Type :
- NPN
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Series :
- Military, MIL-PRF-19500/251
- Factory Lead Time :
- 23 Weeks
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Max Collector Current :
- 800mA
- Datasheets
- JANTX2N2218
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N2218A Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
JANTX2N2218A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
JANTX2N2218A Applications
There are a lot of Microsemi Corporation
JANTX2N2218A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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