JANTX1N5554US

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Manufacturer :

Sensitron Semiconductors

Qualification Status :

Qualified

Type :

Switching Diode

Package Shape :

Round

Peak Non-Repetitive Surge Current (A) :

150

Number of Phases :

1

PPAP :

No

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Forward (Vf) (Max) @ If :

1 V @ 3 A

Number of Terminals :

2

Peak Reverse Current (uA) :

1

Product Status :

Discontinued at Digi-Key

Package Length :

6.99(Max)

Capacitance @ Vr, F :

92pF @ 5V, 1MHz

Supplier Temperature Grade :

Military

Supplier Device Package :

-

Reverse Current-Max :

1 µA

ECCN Code :

EAR99

Maximum Continuous Forward Current (A) :

5

Minimum Operating Temperature (°C) :

-65

Package :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN (US) :

EAR99

Diode Type :

Standard

Peak Forward Voltage (V) :

1@3A

Reach Compliance Code :

Unknown

Terminal Form :

WRAP AROUND

Automotive :

No

Maximum Operating Temperature (°C) :

175

Terminal Position :

END

Operating Temperature - Junction :

-

Non-rep Pk Forward Current-Max :

150 A

Application :

GENERAL PURPOSE

PCB changed :

2

Mounting Type :

Surface Mount

Diode Element Material :

SILICON

Reverse Recovery Time-Max :

2 μs

Series :

*

Mounting :

Surface Mount

Package / Case :

SQ-MELF

JESD-30 Code :

O-LELF-R2

Subcategory :

Rectifier Diodes

Peak Reverse Repetitive Voltage (V) :

1000

Reference Standard :

MIL

Case Connection :

Isolated

Voltage - DC Reverse (Vr) (Max) :

1000 V

Maximum DC Reverse Voltage (V) :

1000

Configuration :

Single

Package Width :

4.72(Max)

Peak Reverse Recovery Time (ns) :

2000

Package Height :

4.72(Max)

Output Current-Max :

3 A

Pin Count :

2

Reverse Recovery Time (trr) :

2 μs

Speed :

Standard Recovery >500ns, > 200mA (Io)

HTS Code :

8541.10.00.80

Rep Pk Reverse Voltage-Max :

1000 V

JESD-609 Code :

e0

EU RoHS :

Not Compliant

Surface Mount :

yes

Current - Reverse Leakage @ Vr :

1 µA @ 1000 V

HTS :

8504.40.95.70

Current - Average Rectified (Io) :

5A