JANSM2N4449
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- Mfr.Part #
- JANSM2N4449
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 12,371
- In Stock ：
- 12,371
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Package :
- Bulk
- Series :
- Military, MIL-PRF-19500/317
- Brand :
- Microchip / Microsemi
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-46
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA, 1V
- RoHS :
- N
- Manufacturer :
- Microchip
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Power - Max :
- 500 mW
- Product Category :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 400nA
- Product Status :
- Active
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Datasheets
- JANSM2N4449
NPN -65°C ~ 200°C (TJ) 400nA TO-206AB, TO-46-3 Metal Can Through Hole
JANSM2N4449 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA, 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.This product comes in a TO-46 device package from the supplier.Device displays Collector Emitter Breakdown (15 V maximal voltage).
JANSM2N4449 Features
the DC current gain for this device is 20 @ 100mA, 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the supplier device package of TO-46
JANSM2N4449 Applications
There are a lot of Microchip Technology
JANSM2N4449 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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