JAN1N5615US

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Peak Reverse Current :

500nA

Element Configuration :

Single

Number of Elements :

1

Radiation Hardening :

No

Current - Reverse Leakage @ Vr :

500μA @ 200V

Reverse Recovery Time :

150 ns

Forward Voltage :

1.6V

Qualification Status :

Qualified

Published :

1997

Max Repetitive Reverse Voltage (Vrrm) :

200V

Current - Average Rectified (Io) :

1A

Diode Type :

Standard

Factory Lead Time :

8 Weeks

RoHS Status :

Non-RoHS Compliant

Terminal Position :

END

Number of Terminations :

2

Voltage - Forward (Vf) (Max) @ If :

800mV @ 3A

Max Operating Temperature :

175°C

ECCN Code :

EAR99

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Additional Feature :

High Reliability

Terminal Form :

WRAP AROUND

Min Operating Temperature :

-65°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material :

SILICON

Packaging :

Bulk

Series :

Military, MIL-PRF-19500/429

Peak Non-Repetitive Surge Current :

30A

HTS Code :

8541.10.00.80

Mount :

Surface Mount

Package / Case :

SQ-MELF, A

Output Current-Max :

1A

Number of Pins :

2

Operating Temperature - Junction :

-65°C~200°C

Mounting Type :

Surface Mount